maximum ratings: (t c =25c) symbol 2n6676 2n6677 2N6678 units collector-emitter voltage v cev 450 550 650 v collector-emitter voltage v ceo 300 350 400 v emitter-base voltage v ebo 8.0 v continuous collector current i c 15 a peak collector current i cm 20 a continuous base current i b 5.0 a power dissipation p d 175 w operating and storage junction temperature t j , t stg -65 to +200 c thermal resistance jc 1.0 c/w electrical characteristics: (t c =25c unless otherwise noted) symbol test conditions min max units i cev v ce =rated v cev , v be(off) =1.5v 100 a i cev v ce =rated v cev , v be(off) =1.5v, t c =100c 1.0 ma i ebo v eb =8.0v 2.0 ma bv ceo i c =200ma (2n6676) 300 v bv ceo i c =200ma (2n6677) 350 v bv ceo i c =200ma (2N6678) 400 v v ce(sat) i c =15a, i b =3.0a 1.5 v v be(sat) i c =15a, i b =3.0a 1.5 v h fe v ce =3.0v, i c =15a 8.0 c ob v cb =10v, i e =0, f=1.0mhz 500 pf f t v ce =10v, i c =1.0a, f=5.0mhz 3.0 10 mhz t d 0.1 s t r 0.6 s t s 2.5 s t f 0.5 s 2n6676 2n6677 2N6678 npn silicon power transistor description: the central semiconductor 2n6676 series types are npn silicon power transistors designed for high voltage switching applications. marking: full part number v cc =200v, i c =15a, i b1 =i b2 =3.0a t p =20s, duty cycle2.0% v bb 6.0v, r l =13.5 to-3 case r0 (26-july 2010) www.centralsemi.com
2n6676 2n6677 2N6678 npn silicon power transistor to-3 case - mechanical outline lead code: 1) base 2) emitter case) collector marking: full part number www.centralsemi.com r0 (26-july 2010)
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